GOFORD · FETs & Power MOSFETs · MPN G09N06S2
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| Current - Continuous Drain(Id) | 9A |
|---|---|
| Pd - Power Dissipation | 2.6W |
| RDS(on) | 14mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.18nF |
| Gate Charge(Qg) | 47nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 60V 9A 2.6W Surface Mount SOP-8