GOFORD · FETs & Power MOSFETs · MPN G090P02S
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| Gate Charge(Qg) | 111nC |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 650pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 3.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 590pF |
| RDS(on) | 7.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.8nF |
| Vgs | ±12V |
P-Channel 20V 11A 3.3W Surface Mount SOP-8