GOFORD · FETs & Power MOSFETs · MPN G08N06S-BQ
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| Output Capacitance(Coss) | 52pF |
|---|---|
| Pd - Power Dissipation | 2.1W |
| Configuration | - |
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 50nC |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 26mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.36nF |
N-Channel 60V 5A 2.1W Surface Mount SOP-8