GOFORD G08N06S

GOFORD · FETs & Power MOSFETs · MPN G08N06S

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Specifications

Gate Charge(Qg)50nC
Drain to Source Voltage60V
Output Capacitance(Coss)52pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)26mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.36nF
Vgs±20V

Technical details

N-Channel 60V 5A 2W Surface Mount SOP-8

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