GOFORD G08N03D2

GOFORD · FETs & Power MOSFETs · MPN G08N03D2

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Specifications

Gate Charge(Qg)15nC
Drain to Source Voltage30V
Output Capacitance(Coss)219pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation17W
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)681pF
Vgs±20V

Technical details

N-Channel 30V 8A 17W Surface Mount DFN2x2-6L

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