GOFORD · FETs & Power MOSFETs · MPN G08N02L
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 22nC |
| Current - Continuous Drain(Id) | 8A |
| Output Capacitance(Coss) | 163pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 640mV |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF |
| RDS(on) | 10mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 929pF |
| Vgs | ±12V |
20V 8A 640mV 1.5W 10mΩ@4.5V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS