GOFORD · FETs & Power MOSFETs · MPN G08N02H
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 12.5nC |
| Output Capacitance(Coss) | 220pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 168pF |
| RDS(on) | 8.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.255nF |
| Vgs | ±12V |
20V 12A 650mV 1.7W 8.8mΩ@4.5V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS