GOFORD G085C03D32

GOFORD · FETs & Power MOSFETs · MPN G085C03D32

No reviews yet — be the first to review GOFORD G085C03D32.

Specifications

Operating Temperature-55℃~+150℃
Output Capacitance(Coss)168pF;176pF
Current - Continuous Drain(Id)28A;12A
Pd - Power Dissipation30W
RDS(on)9mΩ@10V;19mΩ@10V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)151pF;169pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.085nF;1.352nF
Gate Charge(Qg)18nC;25nC

Technical details

N-Channel+P-Channel Array 30V 28A 30W Surface Mount DFN-8L(3x3)

Related FETs & Power MOSFETs