GOFORD · FETs & Power MOSFETs · MPN G080P06T
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| Gate Charge(Qg) | 186nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.452nF |
| Current - Continuous Drain(Id) | 195A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 294W |
| Reverse Transfer Capacitance (Crss@Vds) | 732pF |
| RDS(on) | 6.3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 14.692nF |
| Vgs | ±20V |
P-Channel 60V 195A 294W Through Hole TO-220