GOFORD G080N06K

GOFORD · FETs & Power MOSFETs · MPN G080N06K

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Specifications

Output Capacitance(Coss)247pF
Pd - Power Dissipation110W
Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)77nC
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.1V
Reverse Transfer Capacitance (Crss@Vds)212pF
RDS(on)6.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.408nF

Technical details

60V 80A 110W Surface Mount TO-252

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