GOFORD G070N06TH

GOFORD · FETs & Power MOSFETs · MPN G070N06TH

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)74nC
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation160W
RDS(on)4.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)335pF
Number1 N-channel
Input Capacitance(Ciss)7.05nF
Vgs±20V

Technical details

N-Channel 60V 70A 160W Through Hole TO-220

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