GOFORD G070C03D52

GOFORD · FETs & Power MOSFETs · MPN G070C03D52

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)27nC;23nC
Current - Continuous Drain(Id)65A;19A
Output Capacitance(Coss)230pF;165pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.5V
Pd - Power Dissipation48W;40W
Reverse Transfer Capacitance (Crss@Vds)188pF;157pF
RDS(on)7mΩ@10V;18mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.39nF;1.3nF
Vgs±20V

Technical details

N-Channel+P-Channel 30V 65A 48W Surface Mount DFN-8-Dual(5x6)

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