GOFORD · FETs & Power MOSFETs · MPN G06P01E
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| Gate Charge(Qg) | 14nC |
|---|---|
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 267pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 253pF |
| RDS(on) | 23mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.087nF |
| Vgs | ±10V |
P-Channel 12V 4A 1.8W Surface Mount SOT-23