GOFORD · FETs & Power MOSFETs · MPN G06NP06S2
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| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 54pF;114pF |
| Current - Continuous Drain(Id) | 6A |
| RDS(on) | 30mΩ@10V;37mΩ@10V |
| Pd - Power Dissipation | 2W;2.5W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;2.5V |
| Drain to Source Voltage | 60V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF;111pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.35nF;2.61nF |
| Gate Charge(Qg) | 22nC;25nC |
N-Channel+P-Channel Array 60V 6A 2W 2.5W Surface Mount SOP-8