GOFORD · FETs & Power MOSFETs · MPN G06NP06DS2
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| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 31pF;71pF |
| Current - Continuous Drain(Id) | 3A;6A |
| RDS(on) | 63mΩ@10V;60mΩ@10V |
| Pd - Power Dissipation | 1.7W;2.8W |
| Gate Threshold Voltage (Vgs(th)) | 900mV;1.7V |
| Drain to Source Voltage | 60V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF;65pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 454pF;1.476nF |
| Gate Charge(Qg) | 6nC;29nC |
N-Channel+P-Channel Array 60V 6A 2.8W Surface Mount SOP-8Dual