GOFORD · FETs & Power MOSFETs · MPN G06N10
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| Gate Charge(Qg) | 5.2nC |
|---|---|
| Drain to Source Voltage | 112V |
| Output Capacitance(Coss) | 22pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 195mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 190pF |
| Vgs | ±20V |
N-Channel 100V 9A 25W Surface Mount TO-252