GOFORD G06N06S

GOFORD · FETs & Power MOSFETs · MPN G06N06S

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Specifications

Gate Charge(Qg)46nC
Drain to Source Voltage60V
Output Capacitance(Coss)142pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)139pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.477nF
Vgs±20V

Technical details

N-Channel 60V 8A 2.1W Surface Mount SOP-8

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