GOFORD · FETs & Power MOSFETs · MPN G06N02H
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| Gate Charge(Qg) | 12.5nC |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 165pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 1.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 11.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.14nF |
| Vgs | ±12V |
20V 6A 700mV 1.8W 11.4mΩ@4.5V 1 N-channel N-Channel SOT-223 Single FETs, MOSFETs RoHS