GOFORD G065C03D52

GOFORD · FETs & Power MOSFETs · MPN G065C03D52

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Specifications

Operating Temperature-55℃~+150℃
Output Capacitance(Coss)230pF;340pF
Configuration-
Current - Continuous Drain(Id)65A;35A
Pd - Power Dissipation50W;48W
RDS(on)7mΩ@10V;11mΩ@10V
Gate Threshold Voltage (Vgs(th))1.6V;1.4V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)188pF;330pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.39nF;2.9nF

Technical details

1 N-Channel + 1 P-Channel FET, MOSFET Arrays RoHS

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