GOFORD · FETs & Power MOSFETs · MPN G05NP10S
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| Operating Temperature | -55℃~+150℃ |
|---|---|
| Output Capacitance(Coss) | 138pF;260pF |
| Current - Continuous Drain(Id) | 5A;6A |
| Pd - Power Dissipation | 3W |
| RDS(on) | 127mΩ@10V;193mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 100V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 104pF;170pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 797pF;760pF |
| Gate Charge(Qg) | 18nC;25nC |
3W 2.2V 1 N-Channel + 1 P-Channel SOP-8 FET, MOSFET Arrays RoHS