GOFORD · FETs & Power MOSFETs · MPN G05NP06S2
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| Current - Continuous Drain(Id) | 5A;3.1A |
|---|---|
| Pd - Power Dissipation | 2.5W;1.9W |
| RDS(on) | 28mΩ@10V;62mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V;1.7V |
| Drain to Source Voltage | 60V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF;58pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.336nF;1.454nF |
| Gate Charge(Qg) | 22nC;37nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 60V 5A 3.1A 2.5W 1.9W Surface Mount SOP-8