GOFORD · FETs & Power MOSFETs · MPN G05N06S2
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| Current - Continuous Drain(Id) | 5A |
|---|---|
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 28mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.374nF |
| Gate Charge(Qg) | 26nC |
| Vgs | ±20V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 60V 5A 3.1W Surface Mount SOP-8