GOFORD G050P03T

GOFORD · FETs & Power MOSFETs · MPN G050P03T

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Specifications

Gate Charge(Qg)111nC
Drain to Source Voltage30V
Output Capacitance(Coss)955pF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)923pF
RDS(on)4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.922nF
Vgs±20V

Technical details

P-Channel 30V 85A 100W Through Hole TO-220

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