GOFORD G050P03M

GOFORD · FETs & Power MOSFETs · MPN G050P03M

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)163nC
Output Capacitance(Coss)1.15nF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation100W
RDS(on)3.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1nF
Number1 P-Channel
Input Capacitance(Ciss)7.5nF
Vgs±20V

Technical details

P-Channel 30V 85A 100W Surface Mount TO-263

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