GOFORD G050P03D5

GOFORD · FETs & Power MOSFETs · MPN G050P03D5

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Specifications

Gate Charge(Qg)111nC
Drain to Source Voltage30V
Output Capacitance(Coss)1.053nF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)968pF
RDS(on)3mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)7.67nF
Vgs±20V

Technical details

P-Channel 30V 85A 100W Surface Mount DFN5x6-8L

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