GOFORD G050N03S

GOFORD · FETs & Power MOSFETs · MPN G050N03S

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Specifications

Gate Charge(Qg)37nC
Drain to Source Voltage30V
Output Capacitance(Coss)339pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)326pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.714nF
Vgs±20V

Technical details

N-Channel 30V 18A 2.1W Surface Mount SOP-8

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