GOFORD · FETs & Power MOSFETs · MPN G04NP03S
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| Gate Charge(Qg) | 14.2nC;16.6nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 67.1pF;112.6pF |
| Current - Continuous Drain(Id) | 5.6A;4.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V;1.7V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 61.2pF;107.5pF |
| RDS(on) | 20mΩ@10V;38mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 530.3pF;729.4pF |
| Vgs | ±20V |
30V 2W 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOP-8 Single FETs, MOSFETs RoHS