GOFORD · FETs & Power MOSFETs · MPN G048N04T
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| Gate Charge(Qg) | 117nC |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 593pF |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 548pF |
| RDS(on) | 2.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.561nF |
| Vgs | ±20V |
N-Channel 40V 150A 130W Through Hole TO-220