GOFORD G040P04T

GOFORD · FETs & Power MOSFETs · MPN G040P04T

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Specifications

Gate Charge(Qg)206nC
Drain to Source Voltage40V
Output Capacitance(Coss)2.079nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation178W
Reverse Transfer Capacitance (Crss@Vds)1.401nF
RDS(on)2.9mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)15.087nF
Vgs±20V

Technical details

P-Channel 40V 222A 312W Through Hole TO-220

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