GOFORD · FETs & Power MOSFETs · MPN G040P04M
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| Gate Charge(Qg) | 270nC |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.9nF |
| Current - Continuous Drain(Id) | 180A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 178W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4nF |
| RDS(on) | 2.9mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 13.5nF |
| Vgs | ±20V |
P-Channel 40V 222A 312W Surface Mount TO-263