GOFORD G040P02D5

GOFORD · FETs & Power MOSFETs · MPN G040P02D5

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)134nC
Output Capacitance(Coss)1.53nF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation125W
RDS(on)3.5mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)1.181nF
Number1 P-Channel
Input Capacitance(Ciss)8.998nF
Vgs±12V

Technical details

P-Channel 20V 90A 125W Surface Mount DFN5x6-8L

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