GOFORD G030P04T

GOFORD · FETs & Power MOSFETs · MPN G030P04T

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Specifications

Gate Charge(Qg)206nC
Drain to Source Voltage40V
Output Capacitance(Coss)1.8nF
Current - Continuous Drain(Id)185A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation183W
Reverse Transfer Capacitance (Crss@Vds)1.4nF
RDS(on)2.6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)12.2nF
Vgs±20V

Technical details

P-Channel 40V 185A 183W Through Hole TO-220

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