GOFORD G030P04STL

GOFORD · FETs & Power MOSFETs · MPN G030P04STL

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Specifications

Output Capacitance(Coss)1.8nF
Pd - Power Dissipation174W
Configuration-
Gate Charge(Qg)206nC
Drain to Source Voltage40V
Current - Continuous Drain(Id)190A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
RDS(on)1.9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.4nF
Number1 P-Channel
Input Capacitance(Ciss)12.2nF

Technical details

174W 40V 190A 1.4V 1.9mΩ@10V 1 P-Channel P-Channel STOLL Single FETs, MOSFETs RoHS

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