GOFORD G030N06T

GOFORD · FETs & Power MOSFETs · MPN G030N06T

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Specifications

Gate Charge(Qg)113nC
Drain to Source Voltage60V
Output Capacitance(Coss)1.07nF
Current - Continuous Drain(Id)223A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation240W
Reverse Transfer Capacitance (Crss@Vds)750pF
RDS(on)2.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12nF
Vgs±20V

Technical details

N-Channel 60V 223A 240W Through Hole TO-220

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