GOFORD G030N06M

GOFORD · FETs & Power MOSFETs · MPN G030N06M

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Specifications

Gate Charge(Qg)101nC
Drain to Source Voltage60V
Output Capacitance(Coss)819pF
Current - Continuous Drain(Id)223A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation240W
Reverse Transfer Capacitance (Crss@Vds)752pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12.432nF
Vgs±20V

Technical details

N-Channel 60V 223A 240W Surface Mount TO-263

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