GOFORD G02P06

GOFORD · FETs & Power MOSFETs · MPN G02P06

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Specifications

Gate Charge(Qg)11.3nC
Drain to Source Voltage60V
Output Capacitance(Coss)26pF
Current - Continuous Drain(Id)1.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)150mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)566pF
Vgs±20V

Technical details

P-Channel 60V 1.6A 1.5W Surface Mount SOT-23

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