GOFORD G025N03T

GOFORD · FETs & Power MOSFETs · MPN G025N03T

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)89nC
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation130W
RDS(on)2.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)673pF
Number1 N-channel
Input Capacitance(Ciss)4.223nF
Vgs±20V
TypeN-Channel

Technical details

N-Channel 30V 160A 130W Through Hole TO-220

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