GOFORD G020N03T

GOFORD · FETs & Power MOSFETs · MPN G020N03T

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Specifications

Gate Charge(Qg)110nC
Drain to Source Voltage30V
Output Capacitance(Coss)995pF
Current - Continuous Drain(Id)168A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation140W
Reverse Transfer Capacitance (Crss@Vds)964pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.005nF
Vgs±20V

Technical details

N-Channel 30V 140A 83W Through Hole TO-220

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