GOFORD G020N03K

GOFORD · FETs & Power MOSFETs · MPN G020N03K

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)110nC
Output Capacitance(Coss)929pF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)851pF
RDS(on)1.8mΩ
Number1 N-channel
Input Capacitance(Ciss)5.655nF
Vgs±20V

Technical details

N-Channel 30V 140A 83W Surface Mount TO-252

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