GOFORD · FETs & Power MOSFETs · MPN G01N20RE
No reviews yet — be the first to review GOFORD G01N20RE.
| Gate Charge(Qg) | 12nC |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 1.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 870mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 580pF |
| Vgs | ±20V |
N-Channel 200V 1.7A 3W Through Hole TO-92