GOFORD G01N20LE-B

GOFORD · FETs & Power MOSFETs · MPN G01N20LE-B

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Specifications

Drain to Source Voltage190V
Gate Charge(Qg)12nC
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)590mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)565pF
Vgs±20V

Technical details

190V 6.8A 1.5W Surface Mount SOT-23-3L

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