GOFORD A2T

GOFORD · FETs & Power MOSFETs · MPN A2T

No reviews yet — be the first to review GOFORD A2T.

Specifications

Gate Charge(Qg)11nC
Drain to Source Voltage20V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)5.2A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)630pF
Vgs±12V

Technical details

N-Channel 20V 5.2A 1.25W Surface Mount SOT-23

Related FETs & Power MOSFETs