GOFORD 8N50F

GOFORD · FETs & Power MOSFETs · MPN 8N50F

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Specifications

Gate Charge(Qg)39nC
Drain to Source Voltage500V
Output Capacitance(Coss)38pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)700mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.603nF
Vgs±30V

Technical details

N-Channel 500V 8A 20W Through Hole TO-220F

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