GOFORD 8850

GOFORD · FETs & Power MOSFETs · MPN 8850

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Specifications

Drain to Source Voltage88V
Gate Charge(Qg)34nC
Output Capacitance(Coss)337pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF
Vgs±20V

Technical details

88V 50A 110W Through Hole TO-220

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