GOFORD 8070.0

GOFORD · FETs & Power MOSFETs · MPN 8070.0

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Specifications

Gate Charge(Qg)77nC
Drain to Source Voltage80V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)88A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
Vgs±25V

Technical details

N-Channel 80V 50A Through Hole TO-220

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