GOFORD 66N03

GOFORD · FETs & Power MOSFETs · MPN 66N03

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Specifications

Gate Charge(Qg)14nC
Drain to Source Voltage30V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)136pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.04nF
Vgs±20V

Technical details

N-Channel 30V 36A 31W Surface Mount TO-252

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