GOFORD 6616A

GOFORD · FETs & Power MOSFETs · MPN 6616A

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Specifications

Gate Charge(Qg)19nC
Drain to Source Voltage12V
Output Capacitance(Coss)334pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)17mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)1.74nF
Vgs±8V

Technical details

P-Channel 12V 16A 3W Surface Mount SOP-8

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