GOFORD 630A

GOFORD · FETs & Power MOSFETs · MPN 630A

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)11.8nC
Output Capacitance(Coss)51.5pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)3.2pF
RDS(on)207mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)509pF
Vgs±20V

Technical details

N-Channel 200V 9A 83W Through Hole TO-220

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