GOFORD · FETs & Power MOSFETs · MPN 630A
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 11.8nC |
| Output Capacitance(Coss) | 51.5pF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF |
| RDS(on) | 207mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 509pF |
| Vgs | ±20V |
N-Channel 200V 9A 83W Through Hole TO-220