GOFORD · FETs & Power MOSFETs · MPN 60N06
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| Gate Charge(Qg) | 54nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.35nF |
| Vgs | ±20V |
N-Channel 60V 50A 69W Surface Mount TO-252