GOFORD 5N30

GOFORD · FETs & Power MOSFETs · MPN 5N30

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage300V
Current - Continuous Drain(Id)5A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation44W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 300V 5A 44W Through Hole TO-251

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